Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching-Reference-Cited by-同舟云学术

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

Published:2014-03 Issue: Volume:589 Page:507-512
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Jang Lee-Woon,Jeon Dae-Woo,Polyakov A.Y.,Govorkov A.V.,Sokolov V.N.,Smirnov N.B.,Cho Han-Su,Yun Jin-Hyeon,Shcherbatchev K.D.,Baek Jong-Hyeob,Lee In-Hwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference34 articles.

1. Improved light emission of GaN-based light-emitting diodes by efficient localized surface plasmon coupling with silver nanoparticles

2. Electrical characteristics of Mg-doped p-GaN treated with the electrochemical potentiostatic activation method

3. GaN-Based Green-Light-Emitting Diodes with InN/GaN Growth-Switched InGaN Wells

4. Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate

5. High efficient GaN-based laser diodes with tunnel junction

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