GaN-Based Green-Light-Emitting Diodes with InN/GaN Growth-Switched InGaN Wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=10/a=102101/pdf
Reference31 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. InGaN-GaN multiquantum-well blue and green light-emitting diodes
3. 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
4. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
5. Recent progress of nitride-based light emitting devices
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