Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Ceramics and Composites
Reference13 articles.
1. Bismuth–zinc–niobate embedded capacitors grown at room temperature for printed circuit board applications;Park;Appl. Phys. Lett.,2006
2. Structural and dielectric properties of cubic fluorite Bi3NbO7 thin films as-deposited at 298°K by PLD for embedded capacitor applications;Park;J. Electrochem. Soc.,2006
3. Structural and electrical properties of Bi5Nb3O15 thin films for MIM capacitors with low processing temperatures;Cho;J. Electrochem. Soc.,2008
4. Electrical properties of amorphous Bi5Nb3O15 thin film for RF MIM capacitors;Cho;IEEE Electron Device Lett.,2008
5. Effect of oxygen pressure on the electrical properties of Bi5Nb3O15 films grown by RF magnetron sputtering;Cho;IEEE Electron Device Lett.,2008
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