Author:
Kim Suyeon,Lee Seung-Hun,Cho In Ho,Park Tae Joo,Kim Jeong Hwan
Reference23 articles.
1. Reduction of electrical defects in atomic layer deposited HfO2 films by Al doping;T J Park;Chemistry of Materials,2010
2. Physical properties and electrical characteristics of H2Obased and O3-based HfO2 films deposited by ALD;J Fan;Microelectronics Reliability,2012
3. Structural, optical and electrical properties of HfO2 thin films deposited at low-temperature using plasma-enhanced atomic layer deposition;K M Kim;Materials,2020
4. Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (?100 o C) using O3 as an oxygen source;J H Kim;Appl. Surf. Sci,2014
5. Influence of growth temperature on dielectric strength of Al2O3 thin films prepared via atomic layer deposition at low temperature;S Kim;Scientific Reports,2022