Ultraviolet photodetector on the basis of heterojunction with textured interface-Reference-Cited by-同舟云学术

Ultraviolet photodetector on the basis of heterojunction with textured interface

Published:1999-05 Issue:2 Volume:75 Page:151-155
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Dmitruk N.L,Borkovskaya O.Yu,Mayeva O.I,Mamontova I.B

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. I.D. Anisimova, I.M. Vikulin, F.A. Zaitov, Sh.D. Kurmashev, in: V.I. Stafeyev (Ed.), Semiconductor Photodetectors: Ultraviolet, Visible and Near Infrared Spectral Region, Radio i Sviaz, Moscow, 1984, p. 216.

2. UV photodiod with Schottky barrier Ag–GaAs;Baertsch;J. Appl. Phys.,1969

3. Photosensitivity of Au–GaAs Schottky barrier with microrelief interface (the fundamental absorption region);Borkovskaya;Sov. Phys. Semicond.,1991

4. Photosensitivity of surface-barrier InP structures with microrelief interface;Basiuk;Semiconductors,1993

5. Chemical texturation and sulphiding of GaAs and InP surfaces influence on the photosensitivity of metal/tunnel thin oxide/semiconductor barrier structures;Borkovskaya;Poverkhnost,1997

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