Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies-Reference-Cited by-同舟云学术

Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies

Published:2000-01 Issue:1-4 Volume:50 Page:103-116
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lauwers A,Besser P,Gutt T,Satta A,de Potter M,Lindsay R,Roelandts N,Loosen F,Jin S,Bender H,Stucchi M,Vrancken C,Deweerdt B,Maex K

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Salicidation process using NiSi and its device application

2. Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications

3. Material aspects of nickel silicide for ULSI applications

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