A proposal of new floating-dot memory storing a small number of electrons with relatively long retention time at low voltage operations-Reference-Cited by-同舟云学术

A proposal of new floating-dot memory storing a small number of electrons with relatively long retention time at low voltage operations

Published:1999-06 Issue:1-4 Volume:47 Page:281-283
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Usuki Tatsuya,Futatsugi Toshiro,Yokoyama Naoki

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K. Seki, IEDM 93 p. 541.

2. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan and D. Buchanan, IEDM 95 p. 521.

3. A. Nakajima, T. Futatsugi, K. Kosemura, T. Fukano and N. Yokoyama, IEDM 96 p. 952.

4. L. Guo, E. Leobandung and S. Chou, IEDM 96 p. 955.

5. Theoretical Analysis of Write Errors and Number of Stored Electrons for Ten-Nanoscale Si Floating-Dot Memory

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