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Ge nanocrystal charge trapping devices fabricated by one-step oxidation on poly-SiGe

  • Published:2008-12 Issue:5 Volume:255 Page:2512-2516
  • ISSN:0169-4332
  • Container-title:Applied Surface Science
  • language:en
  • Short-container-title:Applied Surface Science

Author:

Kao Chyuan Haur,Lai Chao Sung,Huang Chen Sheng,Fan K.M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. Fast and long retention time nanocrystal memory;Hanafi;IEEE Trans. Electron Devices,1996

2. Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics;Kim;IEDM Tech. Dig.,1998

3. MOS memory using germanium nanocrystals formed by thermal oxidation of Si1−xGex;King;IEDM Tech. Dig.,1998

4. Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance;She;IEEE Trans. Electron. Devices,2003

5. Volatile and nonvolatile memories in silicon with nanocrystal storage;Tiwari;IEDM Tech. Dig.,1995

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