Author:
Houtsma V.E.,Holleman J.,Salm C.,Woerlee P.H.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
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5. V.E. Houtsma et al. “Stress-Induced Leakage Current in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material”, accepted for publication in Electron Dev. Lett.
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