Al/SiO2(2.0–2.5 nm)/p-Si tunnel junction as a light emitter-Reference-Cited by-同舟云学术

Al/SiO2(2.0–2.5 nm)/p-Si tunnel junction as a light emitter

Published:1999-09 Issue:1-4 Volume:48 Page:79-82
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Asli N.,Gastev S.V.,Grekhov I.V.,Seegebrecht P.,Shulekin A.F.,Tyaginov S.E.,Vexler M.I.,Zimmermann H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions

2. Proc. MIEL-21;Grekhov,1997

3. Hot-carrier luminescence in Si

4. Semiclassical study of the wave vector dependence of the interband impact ionization rate in bulk silicon

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of oxide damage on the light emission properties of MOS tunnel structures;Solid-State Electronics;2004-05

2. Compact quantum model for a silicon MOS tunnel diode;Microelectronic Engineering;2001-11

3. Threshold energies in the light emission characteristics of silicon MOS tunnel diodes;Microelectronics Reliability;2001-07

4. Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides;IEEE Transactions on Electron Devices;2001

5. Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon;Materials Science in Semiconductor Processing;2000-10