Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon-Reference-Cited by-同舟云学术

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Luminescence measurements on MOS tunnel diodes as a method of finding the photon emission rates in silicon

Published:2000-10 Issue:5-6 Volume:3 Page:539-543
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Asli N.,Gastev S.V.,Grekhov I.V.,Seegebrecht P.,Shulekin A.F.,Tyaginov S.E.,Vexler M.I.,Zimmermann H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Hot-carrier luminescence in Si

2. Hess K, editor. Monte Carlo simulations in semiconductors. Boston: Kluwer, 1991.

3. Semiclassical study of the wave vector dependence of the interband impact ionization rate in bulk silicon

4. Modeling electron and hole transport with full-band structure effects by means of the Spherical-Harmonics Expansion of the BTE

5. Current multiplication in metal-insulator-semiconductor (MIS) tunnel diodes

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiative recombination in a silicon MOS tunnel structure;Semiconductors;2004-09

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