Radiative recombination in a silicon MOS tunnel structure-Reference-Cited by-同舟云学术

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Radiative recombination in a silicon MOS tunnel structure

Published:2004-09 Issue:9 Volume:38 Page:1030-1035
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Asli N.,Vexler M. I.,Grekhov I. V.,Seegebrecht P.,Tyaginov S. E.,Shulekin A. F.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1797480.pdf

Reference17 articles.

1. Direct Tunneling, http://semiconductorglossary.com/ .

2. F. Monsieur, in Abstract Book of INFOS’03 (Barselona, Spain, 2003), IT-1.

3. H. S. Momose, M. Ono, T. Yoshitomi, et al., IEEE Trans. Electron Devices 43, 1233 (1996).

4. H. S. Momose, S. Nakamura, T. Ohguro, et al., IEEE Trans. Electron Devices 45, 691 (1998).

5. M. I. Veksler, I. V. Grekhov, S. A. Solov’ev, et al., Pis’ma Zh. Tekh. Fiz. 21(13), 81 (1995) [Tech. Phys. Lett. 21, 530 (1995)].

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