Alkaline cleaning of silicon wafers: additives for the prevention of metal contamination-Reference-Cited by-同舟云学术

Alkaline cleaning of silicon wafers: additives for the prevention of metal contamination

Published:1999-07 Issue:2-3 Volume:45 Page:197-208
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Martin A.R.,Baeyens M.,Hub W.,Mertens P.W.,Kolbesen B.O.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. W. Bergholz, G. Zoth, F. Gelsdorf, B.O. Kolbesen, Metal Contamination in ULSI Technology, Proceedings of the Second Symposium on Defects in Silicon II, The Electrochemical Society, Proc. Vol. 91–9, p. 21

2. Defect aspects of advanced device technologies;Kolbesen,1991

3. H2O2Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity

4. M. Meuris, P.W. Mertens, A. Opdebeeck, H.F. Schmidt, M. Depas, G. Vereecke, M.M. Heyns, A. Philipossian, Solid State Technology, July 1995, p. 109

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