H2O2Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity-Reference-Cited by-同舟云学术

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H2O2Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity

Published:1995-02-28 Issue:Part 1, No. 2B Volume:34 Page:727-731
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Schmidt Harald F.,Meuris Marc,Mertens Paul W.,Rotondaro Antonio L. P.,Heyns Marc M.,Hurd Trace Q.,Hatcher Zach

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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