Enhancement of ALCVD™ TiN growth on Si–O–C and α-SiC:H films by O2-based plasma treatments-Reference-Cited by-同舟云学术

Enhancement of ALCVD™ TiN growth on Si–O–C and α-SiC:H films by O2-based plasma treatments

Published:2002-01 Issue:1-2 Volume:60 Page:59-69
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Satta A,Baklanov M,Richard O,Vantomme A,Bender H,Conard T,Maex K,Li W.M,Elers K.-E,Haukka S

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

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3. Atomic layer epitaxy;Suntola,1994

4. S. Haukka, K.-E. Elers, M. Tuominen, paper D6.4, MRS Proceedings, Vol. 612, Sympos. D: Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics.

5. R.A. Donaton, B. Coenegrachts, E. Sleecks, M. Schaekers, G. Sophie, N. Matsuki, M.R. Baklanov, H. Struyf, M. Lepage, S. Vanhaelemeersch, G. Beyer, M. Stucchi, D. De Roest, K. Maex, paper D5.16, MRS Proceedings, Vol. 612, Sympos. D: Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics.

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