Stripping Hall effect, sheet and spreading resistance techniques for electrical evaluation of implanted silicon layers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Stripping Hall effect, sheet and spreading resistance techniques for electrical evaluation of implanted silicon layers

Published:1998-11 Issue:3-4 Volume:40 Page:275-284
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Boussey Jumana

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Ion Implantation Physics;Ziegler,1992

2. Mechanisms of amorphization in crystalline silicon

3. Ion Implantation in semiconductors-part II: damage production and annealing;Gibbons,1972

4. S.M. Sze, Physics of semiconductors devices, Wiley International edition

5. Four terminal nondestructive electrical and galvanomagnetic measurements;Wieder,1979

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of boron doping on non-linear properties of SOI with embedded polycrystalline silicon layer for RF applications;Solid-State Electronics;2020-02

2. Manufacturing metrology for c-Si module reliability and durability Part II: Cell manufacturing;Renewable and Sustainable Energy Reviews;2016-06

3. Differential Hall profiling of ultra-shallow junctions in Si and SOI;Materials Science and Engineering: B;2005-12

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP