On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics-Reference-Cited by-同舟云学术

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On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics

Published:1997-06 Issue:1-4 Volume:36 Page:329-332
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Buchanan D.A.,Stathis J.H.,Cartier E.,DiMaria D.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. IEDM Tech. Dig.;Momose,1994

2. Mechanism for stress‐induced leakage currents in thin silicon dioxide films

3. On the breakdown statistics of very thin SiO2 films

4. IEDM Technical Digest;Degraeve,1995

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