Investigation of copper diffusion in SiOF, TEOS oxide and TCA oxide using bias thermal stress (BTS) tests-Reference-Cited by-同舟云学术

Investigation of copper diffusion in SiOF, TEOS oxide and TCA oxide using bias thermal stress (BTS) tests

Published:1997-11 Issue: Volume:37-38 Page:205-210
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Abdul-Hak A.,Ahrens C.,Hasse W.,Ullmann J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Fluorine stability in fluorosilicate glass and effect on dielectric properties;Passemard,1996

2. Diffusion of metals in silicon dioxide;McBrayer,1986

3. Stabilizing dielectric constants of fluorine-doped SiO2 films by N2O-plasma annealing;Takeishi,1996

4. Sub-half micron interconnects using reflow of sputtered copper films;Abe,1995

5. TDDB characterisation of thin SiO2 films with bimodal failure populations;Prendergast,1995

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