Author:
Luo Yu-Feng ,Zhong Cheng ,Zhang Li ,Yan Xue-Jian ,Li Jin ,Jiang Yi-Ming ,
Abstract
In this paper, a new in situ method was developed for characterizing the kinetics of the oxidation process of copper thin films by using sheet resistance. Copper thin films were prepared on glass substrate by vacuum deposition. The oxidation kinetics of the copper thin films was studied via sheet resistance which increased during the process. The results suggested that this new method can be applied to the characterization of the reaction kinetics of copper thin film.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
3 articles.
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