Thermal response of MOCVD hafnium silicate-Reference-Cited by-同舟云学术

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Thermal response of MOCVD hafnium silicate

Published:2003-09 Issue:2-4 Volume:69 Page:182-189
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lysaght Patrick,Foran Brendan,Stemmer Susanne,Bersuker Gennadi,Bennett Joe,Tichy Robin,Larson Larry,Huff Howard R

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. P.S. Lysaght, B. Foran, R.S. Tichy, L. Larson, R.W. Murto, H.R. Huff, IEEE RTP, 2002.

2. Experimental observations of the thermal stability of high-k gate dielectric materials on silicon

3. Electroceramics;Moulson,1990

4. High temperature stability in lanthanum and zirconia-based gate dielectrics

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1. Origin of Pr3+ luminescence in hafnium silicate films: combined atom probe tomography and TEM investigations;Nano Futures;2018-07-16

2. Carrier scattering in high-κ/metal gate stacks;Journal of Applied Physics;2017-03-21

3. HAXPES Studies of Advanced Semiconductors;Springer Series in Surface Sciences;2015-12-27

4. Processing and crystallographic structure of non-equilibrium Si-doped HfO2;Journal of Applied Physics;2015-06-28

5. Ruthenium Modified Zr-Doped HfO2 High-k Thin Films with Low Equivalent Oxide Thickness;J ELECTROCHEM SOC;2011

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