Bilayer process for T-gates and Γ-gates using 100-kV e-beam lithography-Reference-Cited by-同舟云学术

Bilayer process for T-gates and Γ-gates using 100-kV e-beam lithography

Published:2003-06 Issue: Volume:67-68 Page:104-108
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Ocola L.E.,Tennant D.M.,Ye P.D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference6 articles.

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2. Submicrometre lift-off line with T-shaped cross-sectional form

3. P.C. Chao, P.M. Smith, S. Wanuga, J.C.M. Huang, W.H. Perkins, R. Tiberio, E.D. Wolf, IEDM Tech. Digest (1983) 613.

4. A novel electron-beam exposure technique for 0.1-μm T-shaped gate fabrication

5. T-gate fabrication using a ZEP520A/UVIII bilayer

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