Two-dimensional materials-based nonvolatile resistive memories and radio frequency switches-Reference-Cited by-同舟云学术

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Two-dimensional materials-based nonvolatile resistive memories and radio frequency switches

Published:2020 Issue: Volume: Page:1-28
ISSN:
Container-title:Emerging 2D Materials and Devices for the Internet of Things
language:
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Author:

Ge Ruijing,Wu Xiaohan,Kim Myungsoo,Lee Jack C.,Akinwande Deji

Publisher

Elsevier

Reference53 articles.

1. Review on physically flexible nonvolatile memory for Internet of everything electronics;Ghoneim;Electronics,2015

2. Prospective of semiconductor memory devices: from memory system to materials;Hwang;Adv. Electron. Mater.,2015

3. Overview of candidate device technologies for storage-class memory;Burr;IBM J. Res. Dev.,2008

4. A review of emerging non-volatile memory (NVM) technologies and applications;Chen;Solid-State Electron.,2018

5. Metal–oxide RRAM;Wong;Proc. IEEE,2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resistive Switching and Hysteresis Phenomena at Nanoscale;Electromagnetic Field in Advancing Science and Technology;2023-03-29

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