Molecular beam epitaxy of IV–VI semiconductors-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of IV–VI semiconductors

Published:2013 Issue: Volume: Page:263-310
ISSN:
Container-title:Molecular Beam Epitaxy
language:
Short-container-title:

Author:

Springholz Gunther

Publisher

Elsevier

Reference287 articles.

1. Wiley encyclopdia of electrical and electronic engineering;Springholz,1999

2. Lead chalcogenides: physics and applications;Springholz,2002

3. Lead salt quantum effect structures

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2. Growth of PbTe nanowires by molecular beam epitaxy;Materials for Quantum Technology;2022-02-22

3. Superconductivity in In-doped AgSnBiTe3 with possible band inversion;Scientific Reports;2021-11-24

4. Unraveling the structural and electronic properties of strained PbSe on GaAs;Journal of Crystal Growth;2021-09

5. Ternary Pb1−xCdxSe films grown by molecular beam epitaxy on GaAs/ZnTe hybrid substrates;Journal of Crystal Growth;2019-02

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