Active-Matrix LCD With Amorphous Thin-Film Transistors ☆

Author:

Migliorato Piero,Saliqur Rahman Abu Zayed Mohammad

Publisher

Elsevier

Reference25 articles.

1. Bonnel, M.B., Vinouze, F.J., Morin, R., et al., 1987. A full color 4.2” diagonal LCTV using two steps process for TFTs. In: Proceedings of Euro Display 87, pp. 180–182.

2. Top gate staggered amorphous silicon thin-film transistors: Series resistance and nitride thickness effects;Chang;Jpn. J. Appl. Phys.,1998

3. Short channel effects in polysilicon thin film transistors;Fortunato;Thin Solid Films,2005

4. Improvement in the negative bias illumination stress stability for silicon-ion implanted amorphous InGaZnO thin-film transistors;Goto;IEEE Electron Device Letters,2017

5. Ikeda, M., Ogawa, M., Suzuki, K., 1989. Low resistance copper address line for TFT-LCD. In: Japan Display 89, p. 498.

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