1. International Roadmap for Semiconductors.http://www.itrs.net (accessed July 2009).
2. Strained Ge channel p-type metal–oxide–semiconductor field effect transistor grown on SixGe1−x/Si virtual substrates;Lee;Applied Physics Letters,2001
3. High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric;Shang,2002
4. Strained CMOS devices with shallow-trench-isolation stress buffer layers;Li;IEEE Transactions on Electron Devices,2008
5. Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode;Zhu;IEEE Electron Device Letters,2004