The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits-Reference-Cited by-同舟云学术

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The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits

Published:1981 Issue: Volume: Page:253-395
ISSN:
Container-title:Silicon Integrated Circuits
language:
Short-container-title:

Author:

IPRI ALFRED C.

Publisher

Elsevier

Reference261 articles.

1. The TFT A New Thin-Film Transistor

2. “Heteroepitaxial Semiconductors For Electronic Devices,”;Cullen,1978

3. M. V. Djevahirdjian, Swiss Patent 354, 428 (1961).

4. New Oxy‐Hydrogen Burner for Flame Fusion

5. Growth of Mg-Al spinel crystals of large diameter using a modified flame fusion technique

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic Magnetometry Using a Metasurface Polarizing Beamsplitter in Silicon-on-Sapphire;ACS Photonics;2024-09-09

2. Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs;Electronics Letters;2003

3. Silicon-on-lnsulator Technology: Past Achievements and Future Prospects;MRS Bulletin;1998-12

4. SOI Materials;Silicon-on-Insulator Technology: Materials to VLSI;1997

5. Methods of Forming SOI Wafers;Electrical Characterization of Silicon-on-Insulator Materials and Devices;1995

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