1. P. Gaskell, in: R.W. Cahn, P. Haasen, E.J. Kramer (Eds.), Materials Science and Technology, Vol. 9, J. Zarzycki (volume editor), VCH, Weinheim, 1991.
2. Handbook of Semiconductors, Vol. 1;Hull,2000
3. R. Chau, J. Kavalieros, B. Roberds, R. Schenker, D. Lionberger, D. Barlage, B. Doyle, R. Arghavani, A. Murthy, G. Dewey, 30nm Physical Gate Length CMOS Transistors with 1.0ps n-MOS and 1.7ps p-MOS Gate Delays, IEEE Conference On Electronic Devices and Materials, San Fransisco, December 2000.
4. Surface roughness at the Si(100)-SiO2interface
5. Si→SiO2transformation: Interfacial structure and mechanism