Determination of absolute configurations of crystal structures using electron diffraction patterns by means of least-squares refinement
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
2. Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals
3. Deposition and surface characterization of high quality single crystal GaN layers
4. Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire
5. Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves
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3. Appropriate zone-axis orientations for the determination of crystal polarity by convergent-beam electron diffraction;Journal of Applied Crystallography;2015-04-25
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