Determination of the orientation of a stacking fault by large-angle convergent-beam electron diffraction (LACBED)
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Electron diffraction from crystals containing stacking faults: I
2. A kinematical theory of diffraction contrast of electron transmission microscope images of dislocations and other defects
3. The Determination of the Type of Stacking Faults in Face Centered Cubic Alloys by Means of Contrast Effects in the Electron Microscope
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of stacking fault probability in fcc Fe–Mn–Si–Al alloy by electron diffraction;Journal of Applied Physics;2007-05
2. LACBED study of extended defects in 4H-SiC;Philosophical Magazine Letters;2006-09
3. CBED and LACBED: characterization of antiphase boundaries;Ultramicroscopy;2003-12
4. Anaysis of Lacbed Patterns from A Microtwin in Cobalt;Microscopy and Microanalysis;2001-08
5. Elastic scattering of partially coherent beams of fast electrons by a crystal with a defect;Acta Crystallographica Section A Foundations of Crystallography;1999-03-01
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