1. P. Klipstein, O. Klin, S. Grossman, N. Snapi, I. Lukomsky, M. Brumer, M. Yassen, D. Aronov, E. Berkowicz, A. Glozman, T. Fishman, O. Magen, I. Shtrichman, E. Weiss, MWIR InAsSb XBnn detector (bariode) arrays operating at 150 K, in: B.F. Andresen, G.F. Fulop, P.R. Norton (Eds.), Infrared Technology and Applications XXXVII, Proc. of SPIE Vol. 8012 80122R-1-9, .
2. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors;Soibel;Appl. Phys. Lett.,2014
3. Bulk InAsxSb1-x nBn photodetectors with greater than 5 μm cutoff on GaSb;Baril;Appl. Phys. Lett.,2016
4. Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays;Craig;Appl. Phys. Lett.,2013
5. Metamorphic InAsSb-based barrier photodetectors for the long wave infrared region;Wang;Appl. Phys. Lett.,2013