Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4844615
Reference18 articles.
1. A low-noise laser-gated imaging system for long-range target identification
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5. nBn structure based on InAs∕GaSb type-II strained layer superlattices
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