GaSb for passivating type-II InAs/GaSb superlattice mesas
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. InAs/GaInSb superlattices as a promising material system for third generation infrared detectors
2. Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes
3. Passivation of InAs∕(GaIn)Sb short-period superlattice photodiodes with 10μm cutoff wavelength by epitaxial overgrowth with AlxGa1−xAsySb1−y
4. Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes
5. On the performance and surface passivation of type II InAs∕GaSb superlattice photodiodes for the very-long-wavelength infrared
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1. Surface passivation of 1550nm AlxInyAsSb avalanche photodiode;Optoelectronic Devices and Integration VII;2018-11-05
2. Dark current mechanisms and spectral response of SiO2-passivated photodiodes based on InAs/GaSb superlattice;Thin Solid Films;2017-05
3. Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application;Optics Letters;2014-12-18
4. Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials;Applied Surface Science;2014-11
5. Advances in mid-infrared detection and imaging: a key issues review;Reports on Progress in Physics;2014-08-01
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