Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials-Reference-Cited by-同舟云学术

Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials

Published:2014-11 Issue: Volume:320 Page:414-428
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Knorr Jr Daniel B.,Williams Kristen S.^ORCID,Baril Neil F.,Weiland Conan,Andzelm Jan W.,Lenhart Joseph L.,Woicik Joseph C.,Fischer Daniel A.,Tidrow Meimei Z.,Bandara Sumith V.,Henry Nathan C.

Funder

U.S. Army Research Laboratory

U.S. Army Communications-Electronics Research Development and Engineering Center CDIF program

U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences

Oak Ridge Institute for Science and Education

U.S. Department of Energy

USARL

DoD High Performance Computing Modernization Programs

U.S. Air Force Research Laboratory DoD Supercomputing Resource Centers

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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3. Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes;Bogdanov;Appl. Phys. Lett.,2011

4. Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer Superlattice Photodiodes;Banerjee;J. Electron. Mater.,2009

5. Performance improvement of long-wave infrared InAs/GaSb strained-layer superlattice detectors through sulfur-based passivation;Plis;Infrared Phys. Technol.,2012

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