Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3584853
Reference13 articles.
1. A new semiconductor superlattice
2. Proposal for strained type II superlattice infrared detectors
3. Mechanism of suppression of Auger recombination processes in type‐II heterostructures
4. Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering
5. Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
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1. Quasi-3-dimensional simulations and experimental validation of surface leakage currents in high operating temperature type-II superlattice infrared detectors;Journal of Applied Physics;2022-11-28
2. Sb-based third generation at Center for Quantum Devices;Infrared Technology and Applications XLVI;2020-04-23
3. InAs/GaSb type II superlattices: A developing material system for third generation of IR imaging;Mid-infrared Optoelectronics;2020
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