Study of dislocations in HgCdTe epilayers at (111)B and (110) surfaces using modified defect etchant-Reference-Cited by-同舟云学术

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Study of dislocations in HgCdTe epilayers at (111)B and (110) surfaces using modified defect etchant

Published:2015-07 Issue: Volume:71 Page:378-383
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Nokhwal Radheshyam,Saxena Raghvendra Sahai,Sharma B.L.,Kumar Anand,Hashmi S.A.,Sharma R.K.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. HgCdTe infrared detector material: history, status and outlook;Rogalski;Rep. Prog. Phys.,2005

2. HgCdTe infrared detectors;Norton;Opto-electronic. Rev.,2002

3. Etch pit study of dislocation formation in Hg1−xCdxTe during array hybridization and its effect on device performance;Norton;J. Vacuum Sci. Technol. A Vacuum, Surf., Film,1989

4. Reduction of dislocation density by producing novel structures;Stoltz;J. Electron. Mater.,2012

5. Key performance-limiting defects in P-on-N HgCdTe;Chen;J. Electron. Mater.,1996

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1. Investigation of Passivation Pretreatment Processes for Mid‐/Long‐Wavelength Dual‐Band Infrared Focal Plane Arrays Based on Type‐II InAs/GaSb Superlattices;Advanced Engineering Materials;2024-03-18

2. Mid-/Short-Wave dual-band infrared detector based on InAs/GaSb superlattice/GaSb bulk materials;J INFRARED MILLIM W;2021

3. Chemo-mechanical Polishing of HgCdTe Epilayers Grown Using LPE Technique;Springer Proceedings in Physics;2019

4. Influence of the Compositional Grading on Concentration of Majority Charge Carriers in Near-Surface Layers of n(p)-HgCdTe Grown by Molecular Beam Epitaxy;Journal of Electronic Materials;2018-02-13

5. Deep Tellurium Purification for the Production of Electronic and Photonic Materials;Russian Microelectronics;2017-12

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