Offset in the dark current characteristics of photovoltaic double barrier quantum well infrared photodetectors
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Design issues relating to low-temperature dark current in quantum well infrared photodetectors
2. Device physics and focal plane array applications of QWIP and MCT
3. Quantum well infrared photodetectors for low background applications
4. Characteristics of QWIPs at low background
5. High responsivity, LWIR dots-in-a-well quantum dot infrared photodetectors
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Zero-bias offsets in I–V characteristics of the staircase type quantum well infrared photodetectors;Applied Surface Science;2014-11
2. I–V characterization of a quantum well infrared photodetector with stepped and graded barriers;Superlattices and Microstructures;2012-09
3. Performance Improvement of AlGaAs/GaAs QWIP by ${\rm NH}_{3}$ Plasma Treatment;IEEE Journal of Quantum Electronics;2012-07
4. Dark current of AlGaAs/GaAs n-QWIP prepared on patterned (001) GaAs substrate by MOVPE;2006 International Conference on Advanced Semiconductor Devices and Microsystems;2006-10
5. Characterization of QWIP structures prepared on GaAs-patterned substrates;Microelectronics Journal;2006-09
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