I–V characterization of a quantum well infrared photodetector with stepped and graded barriers
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Quantum well avalanche multiplication initiated by 10 μm intersubband absorption and photoexcited tunneling
2. 1024 × 1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applications
3. Three-band quantum well infrared photodetector using interband and intersubband transitions
4. Three-color broadband asymmetric quantum well infrared photodetectors in long wavelength infrared range (LWIR)
5. Quantum well photoconductors in infrared detector technology
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1. A study on the voltage-dependent response of a GaInNAs-based pin photodetector with a quasi-cavity;Semiconductor Science and Technology;2018-10-12
2. Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes;Superlattices and Microstructures;2017-11
3. Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy;Journal of Materials Science;2017-01-13
4. Zero-bias offsets in I–V characteristics of the staircase type quantum well infrared photodetectors;Applied Surface Science;2014-11
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