Improvement of R0A product of type-II InAs/GaSb superlattice MWIR/LWIR photodiodes-Reference-Cited by-同舟云学术

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Improvement of R0A product of type-II InAs/GaSb superlattice MWIR/LWIR photodiodes

Published:2009-11 Issue:6 Volume:52 Page:340-343
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Chen Yiqiao,Moy Aaron,Xin Shangheng,Mi Kan,Chow Peter P.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices

2. Determination of band gap and effective masses in InAs/Ga1−xInxSb superlattices

3. Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices

4. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes

5. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAs/GaSb Type-II Superlattice Detectors;Advances in Electronics;2014-04-10

2. Fabrication and performance of InAs/GaSb type-II superlattices mid-wavelength infrared detectors;SPIE Proceedings;2013-09-11

3. nBn dark current reduction by UV hydrogenation;Infrared Physics & Technology;2013-07

4. Inductively coupled plasma etching for delineation of InAs/GaSb pixels;SPIE Proceedings;2012-10-24

5. 320 x 256 complementary barrier infrared detector focal plane array for long-wave infrared imaging;SPIE Proceedings;2012-05-01

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