Demonstration of 1280 × 1024 long-wavelength infrared FPA with 10 μm pixel pitch based on InAs/GaSb type-II superlattice-Reference-Cited by-同舟云学术

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Demonstration of 1280 × 1024 long-wavelength infrared FPA with 10 μm pixel pitch based on InAs/GaSb type-II superlattice

Published:2022-06 Issue: Volume:123 Page:104199
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Wu Jia,Liu Yongfeng,Zhou Wenhong,Wang Xiaobi,Wei Qinxiang,Wang Jing,Cao Shensong,Liu Bin,Huang Li

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. “Rule 07” revisited: Still a good heuristic predictor of p/n HgCdTe photodiode performance?[J];Tennant;J. Electron. Mater.,2010

2. Proposal for strained type II superlattice infrared detectors[J];Smith;J. Appl. Phys.,1987

3. Auger lifetime enhancement in InAs–Ga1− x In x Sb superlattices[J];Youngdale;Appl. Phys. Lett.,1994

4. Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K[J];Nguyen;Appl. Phys. Lett.,2008

5. A high-performance long wavelength superlattice complementary barrier infrared detector[J];Ting;Appl. Phys. Lett.,2009

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-latency equal optical path difference sampling for multi-field VLWIR interference signals;Infrared Physics & Technology;2024-05

2. Dark Current Analysis of InAs/GaSb Type II Superlattice Infrared Detectors;IEEE Transactions on Electron Devices;2023-11

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