Calculation of the R0A product in n+–n–p and p+–p–n GaInAsSb infrared detectors
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes
2. Room‐temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy
3. Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE
4. High performance GaInAsSb/GaSb p‐n photodiodes for the 1.8–2.3 μm wavelength range
5. GaInAsSb/GaSb infrared photodetectors prepared by MOCVD
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical modeling and ATLAS simulation of N+-InP/n0-In0.53Ga0.47As/p+-In0.53Ga0.47As p-i-n photodetector for optical fiber communication;Infrared Physics & Technology;2010-07
2. Design of mid-infrared InAs/GaSb superlattice detectors for room temperature operation;Finite Elements in Analysis and Design;2008-06
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