Effects of high-energy proton implantation on the luminescence properties of InAs submonolayer quantum dots-Reference-Cited by-同舟云学术

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Effects of high-energy proton implantation on the luminescence properties of InAs submonolayer quantum dots

Published:2016-03 Issue: Volume:171 Page:27-32
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Upadhyay S.,Mandal A.,Subrahmanyam N.B.V.,Singh P.,Shete P.,Tongbram B.,Chakrabarti S.

Funder

Department of Science and Technology

Center of Excellence in Nanoelectronics

Riber

IITB

SAIF

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference27 articles.

1. High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300nm;Salhi;Semicond. Sci. Technol.,2007

2. Comparison of InAs/GaAs quantum dot infrared photodetector and GaAs/(AlGa)As superlattice infrared photodetector;Lin;Jpn. J. Appl. Phys.,2001

3. Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure;Wong;Nanotechnol,2008

4. High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer;Ling;Appl. Phys. Lett.,2008

5. Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures;Adhikary;J. Cryst. Growth,2010

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1. Radiation hardness of semiconductor laser diodes for space communication;Applied Physics Reviews;2024-05-07

2. Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation;Journal of Luminescence;2020-07

3. Optimization of strain-coupled InAs QD layers in P-i-P infrared photodetector heterostructures;Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling XVII;2020-03-02

4. Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots;IEEE Journal of Selected Topics in Quantum Electronics;2019-11

5. Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence;Japanese Journal of Applied Physics;2018-08-01

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