Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure-Reference-Cited by-同舟云学术

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Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure

Published:2008-09-22 Issue:43 Volume:19 Page:435710
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Wong P S,Liang B L,Dorogan V G,Albrecht A R,Tatebayashi J,He X,Nuntawong N,Mazur Yu I,Salamo G J,Brueck S R J,Huffaker D L

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/19/i=43/a=435710/pdf

Reference25 articles.

1. Critical layer thickness for self-assembled InAs islands on GaAs

2. InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

3. Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement

4. Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots

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1. Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots;Journal of Luminescence;2018-10

2. Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots;Optics Express;2018-08-23

3. ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity;Nanotechnology;2016-11-02

4. Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots;Nanotechnology;2016-10-17

5. Pattern transfer to GaAs substrates and epitaxial growth of GaAs nanostructures using self-organized porous templates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03

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