Research on the junction-temperature characteristic of GaN light-emitting diodes on Si substrate-Reference-Cited by-同舟云学术

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Research on the junction-temperature characteristic of GaN light-emitting diodes on Si substrate

Published:2007-01 Issue: Volume:122-123 Page:693-695
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Jiang Fengyi,Liu Weihua,Li Youqun,Fang Wenqing,Mo Chunlan,Zhou Maoxing,Liu Hechu

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference10 articles.

1. S. Nakamura, S. Pearton, G. Fasol, The Blue Laser Diode: The Complete Story, Springer, New York, 2000, p. 3, (Physics and astronomy) ISBN 3-540-66505-6.

2. Ultraviolet and violet GaN light emitting diodes on silicon

3. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy

4. Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates

5. Bright, Crack-Free InGaN/GaN Light Emitters on Si(111)

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3. Dynamic opto-electro-thermal characterization of solid state lighting devices: measuring the power conversion efficiency at high current densities;Journal of Physics D: Applied Physics;2022-07-21

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