Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate
Author:
Funder
Russian Science Foundation
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
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1. Regulating Effect of Substrate Temperature on Sputtering-grown Ge/Si QDs under Low Ge Deposition;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2024-07-05
2. Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2024-06
3. Quasistationary and stationary electron quantum-confined states in the germanium/silicon nanosystems with germanium quantum dots;Molecular Crystals and Liquid Crystals;2024-05-07
4. Radiation intensity of optical transitions in the germanium/silicon nanosystems with germanium quantum dots;Optical Engineering;2023-06-14
5. Morphology and structure evolution of multilayered Ge/Si quantum dots grown by magnetron sputtering;Micro & Nano Letters;2023-02
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