Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure-Reference-Cited by-同舟云学术

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Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure

Published:2011-04 Issue:4 Volume:131 Page:825-828
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Sun Jingchang,Feng Qiuju,Bian Jiming,Yu Dongqi,Li Mengke,Li Chengren,Liang Hongwei,Zhao Jianze,Qiu Hong,Du Guotong

Funder

NSFC

China Postdoctoral Science Foundation

Doctoral Scientific Research Starting Foundation of Liaoning province

Postdoctoral fund of Jilin University

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference26 articles.

1. Deposition and electrical properties of N–In codopedp-type ZnO films by ultrasonic spray pyrolysis

2. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

3. Epitaxial growth and optoelectronic properties of nitrogen-doped ZnO films on Al2O3 substrate

4. Blue Light-Emitting Diode Based on ZnO

5. Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

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2. Zinc oxide-based light-emitting diodes and lasers;Nanostructured Zinc Oxide;2021

3. Construction and photoluminescence mechanism of n-n type double heterojunction Bi2S3/Bi4Ti3O12/Bi2MoO6 phosphors;Optik;2020-12

4. Nanostructured device based on coated ZnO layer as a window in solar cell applications;Materials Science-Poland;2018-12-01

5. Europium incorporation dynamics and some physical investigations within ZnO sprayed thin films;Materials Science in Semiconductor Processing;2016-03

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