The effect of O2 partial pressure on the photoluminescence of ZnO thin films grown by pulsed laser deposition-Reference-Cited by-同舟云学术

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The effect of O2 partial pressure on the photoluminescence of ZnO thin films grown by pulsed laser deposition

Published:2014-08 Issue: Volume:152 Page:254-257
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Lu Y.M.,Li X.P.,Su S.C.,Cao P.J.,Jia F.,Han S.,Zeng Y.X.,Liu W.J.,Zhu D.L.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong province

Science and Technology Research Items of Shenzhen, and the Items of Shenzhen Key Laboratory of Special Functional Materials

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference22 articles.

1. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

2. Excitonic ultraviolet lasing in ZnO-based light emitting devices

3. Temperature dependence of the free-exciton transition energy in zinc oxide by photoluminescence excitation spectroscopy

4. Synthesis and optical properties of well-aligned ZnO nanorod array on an undoped ZnO film

5. Band-edge emission of undoped and doped ZnO single crystals at room temperature

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2. Stable white emission and color-tunable electroluminescence achieved from n-ZnO/p-GaN nano-heterojunction decorated with CsPbBr3 and CsPbI3 quantum dots;Journal of Luminescence;2022-04

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4. Solar-Blind Photodetector with Lower Dark Current and Higher Ilight/Idark Ratio Based on Mg0.38Zn0.62O Film Deposited by Pulsed Laser Deposition Method;Journal of Nanoscience and Nanotechnology;2021-03-01

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