Raman scattering and cathodoluminescence properties of Er3+ and Eu3+ co-doped GaN films-Reference-Cited by-同舟云学术

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Raman scattering and cathodoluminescence properties of Er3+ and Eu3+ co-doped GaN films

Published:2019-02 Issue: Volume:206 Page:603-607
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Chen FeiFei,Xia Yonglu,Wang Xiaodan,Chen Jiafan,Zeng Xionghui,Wang Jianfeng,Xu Ke

Funder

National Natural Science Foundation of China

Innovation Center of Suzhou Nano Science and Technology

PAPD and USTS Cooperative Innovation Center

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference25 articles.

1. Simultaneous emission of red, green, and blue in Pr, Er, and Tm co-implanted GaN thin films;Wang;Mater. Chem. Phys.,2017

2. Investigation of energy transfer mechanism in Er3+ and Tm(3+)doped AlN crystalline films;Wang;J. Alloy. Compd.,2017

3. White light emission from GaN stack layers doped by different rare-earth metals;Zhang;Jpn. J. Appl. Phys.,2015

4. Three-color integration on rare-earth-doped GaN electroluminescent thin films;Wang;Appl. Phys. Lett.,2003

5. Electroluminescent properties of erbium-doped III-N light-emitting diodes;Zavada;Appl. Phys. Lett.,2004

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Luminescence Characteristics and Energy Transfer Mechanism of Eu³⁺, Tm³⁺ Co-doped GaN Films;ACTA PHOTONICA SINIC;2022

2. Structure and cathodoluminescence properties of Dy3+ and Eu3+ co-doped AlN films;Optical Materials;2022-06

3. Synthesis and properties of azines functionalized graphene with extremely high adsorptive ability to Eu3+ ions;FlatChem;2022-05

4. Structure and luminescence properties of Eu3+ and Dy3+ implanted GaN films;Superlattices and Microstructures;2021-08

5. Research Progress on Adjusting and Controlling Luminescence Performance of GaN∶Eu 3+ Materials;Laser & Optoelectronics Progress;2020

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