Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder-Reference-Cited by-同舟云学术

Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder

Published:2010-03 Issue:3 Volume:130 Page:460-465
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Lopes E.M.,Duarte J.L.,Poças L.C.,Dias I.F.L.,Laureto E.,Quivy A.A.,Lamas T.E.

Funder

CoordenaÃ§Ã£o de AperfeiÃ§oamento de Pessoal de NÃvel Superior

FundaÃ§Ã£o AraucÃ¡ria

Banco do Nordeste do Brasil

Conselho Nacional de Desenvolvimento CientÃfico e TecnolÃ³gico

FundaÃ§Ã£o Cearense de Apoio ao Desenvolvimento CientÃfico e TecnolÃ³gico

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference40 articles.

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2. X.G.P. Grish. Terahertz plasmon modes in grating coupled double quantum well field effect transistors, Ph.D. Thesis, University of California, Santa Barbara, (2002).

3. A high-speed intersubband modulator based on quantum interference in double quantum wells

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