Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice-Reference-Cited by-同舟云学术

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Influence of defects on the optical and structural properties of Ge dots embedded in an Si/Ge superlattice

Published:2006-12 Issue:2 Volume:121 Page:417-420
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Fonseca A.,Sobolev N.A.,Leitão J.P.,Alves E.,Carmo M.C.,Zakharov N.D.,Werner P.,Tonkikh A.A.,Cirlin G.E.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference8 articles.

1. Influence of electron irradiation and annealing on the photoluminescence of Si/Ge superlattices and Si/Ge quantum wells

2. Influence of defects on the luminescence of Ge/Si quantum dots

3. Enhanced radiation hardness of photoluminescence from InAs quantum dots embedded in an AlAs/GaAs superlattice structure

4. Room-temperature light emission from a highly strained Si/Ge superlattice

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic and magnetic properties of the Janus MoSSe/WSSe superlattice nanoribbon: a first-principles study;Physical Chemistry Chemical Physics;2020

2. A Theoretical Simulation of the Radiation Responses of Si, Ge, and Si/Ge Superlattice to Low-Energy Irradiation;Nanoscale Research Letters;2018-05-02

3. Effects of period number and sputtering time on optical properties of Si/Ge multilayer films deposited by magnetron sputtering;Journal of Materials Science: Materials in Electronics;2017-10-25

4. Comparison of fluctuating potentials and donor-acceptor pair transitions in a Cu-poor Cu2ZnSnS4 based solar cell;Applied Physics Letters;2014-10-20

5. Application of quantum dot infrared photodetectors in space photoelectric systems;Acta Physica Sinica;2014

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