1. A.E. Awwad, S. Dieckerhoff, Short-circuit evaluation and overcurrent protection for SiC power MOSFETs. In: 2015 17th European conference on power electronics and applications (EPE’15 ECCE-Europe). Geneva, Switzerland; 2015, p. 1–9.
2. S. Mocevic, et al. Comparison and discussion on shortcircuit protections for silicon-carbide MOSFET modules: Desaturation versus rogowski switch-current sensor. IEEE Trans Ind Appl 56(3):2880–93.
3. S. Yin, Y. Liu, A reliable gate driver with desaturation and over-voltage protection circuits for SiC MOSFET. In: PCIM Asia 2018; International exhibition and conference for power electronics, intelligent motion, renewable energy and energy management. Shanghai, China; 2018, p. 1–5.
4. K. Sun, J. Wang, R. Burgos, D. Boroyevich, et al. Analysis and design of an overcurrent protection scheme based on parasitic inductance of SiC MOSFET power module. In: 2018 IEEE applied power electronics conference and exposition (APEC). San Antonio, TX, USA; 2018, p. 2806–12.
5. J. Kim, Y. Cho, Overcurrent and short-circuit protection method using desaturation detection of SiC MOSFET. In: 2020 IEEE PELS workshop on emerging technologies: Wireless power transfer (WoW). Seoul, Korea (South); 2020, p. 197–200.